Samsung Develops Next-Generation Syncronous DRAM
Samsung Electronics on January 28 announced that together with the American firm RCC it has developed a next-generation memory semiconductor of 133 MHz(PC-133) of syncronous DRAM, which is adaptable on 64, 128 and 256 megabyte products.It is 33 percent faster than the PC-100(1MHz) and Samsung will be supplying the product to Compaq and Dell Computer beginning in March.
with the Korea JoongAng Daily
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