Samsung unwraps 3-D vertical NAND memory

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Samsung unwraps 3-D vertical NAND memory

Samsung Electronics on Monday launched the world’s first 3-D vertical NAND flash memory.

Unlike DRAM, NAND flash memory is a stable storage technology that does not require power to retain data.

Samsung said its 3-D 3-bit V-NAND is used for a wide range of consumer electronics and enterprise applications, including solid-state drives (SSDs). Data center managers can expect increased productivity and longevity, while saving on their power bill with the 3-D V-NAND, the company said.

According to the Korean tech giant, it launched the 850 EVO, a cutting-edge SSD based on 3-D 3-bit V-NAND, in 53 countries, including Korea, the United States, China and Germany.

Samsung’s 3-bit 3-D V-NAND SSD is faster and more durable than the existing SSDs based on planar NAND flash. Samsung differentiates its products from those of competitors by having the 24-layer vertical NAND technology.

“The 850 EVO SSD will provide a faster computing experience for consumers,” said Kim Eon-soo, executive director of the memory business marketing team at Samsung.

“We will speed up Samsung’s expansion of the SSD market by launching a series of V-NAND SSD products in various forms.”

The Samsung 850 EVO SSDs will be available with 120GB, 250GB, 500GB and 1TB storage capacities.

Sequential read performance of the 850 EVO is expected to be up to 550MB per second, while write performance is projected to be up to 520MB per second.

Samsung’s launch of 3-D 3-bit V-NAND SSDs is in line with steady expansion of the NAND flash market, which is expected to grow 12 percent year-on-year in 2015 to $27.6 billion.

It is currently No. 1 in the NAND flash market with a 29.7 percent share in the third quarter, but it is the first time Samsung’s market share has fallen below 30 percent.

No. 2 player Toshiba has 23.7 percent and SK Hynix 10.3 percent.

However, Samsung maintains a solid position in the DRAM market, which is expected to grow 16 percent year-on-year in 2015 to $54.1 billion, according to U.S.-based memory market intelligence service DRAMeXchange.

The mobile DRAM market, in particular, is expected to increase more than 40 percent next year from 36 percent growth this year, according to market research firm IHS, headquartered in the United States.

BY KIM JUNG-YOON [kjy@joongang.co.kr]

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