Samsung reveals new DRAM memory chips

Samsung Electronics said Tuesday it has developed a new mobile dynamic random access memory (DRAM) chip optimized for 5G wireless networks and the artificial intelligence (AI) features of smartphones.

The Korean tech giant said it finished the development of the 10nm-class 8-gigabyte LPDDR5 DRAM chip in April, which boasts a speed of 6,400 Mbps, 1.5 times faster than the existing LPDDR4X DRAM currently installed in flagship smartphones.

Samsung said the chip is capable of transmitting 14 full-HD quality movies of 51.2 gigabytes (Gb) in a second.

The company said the development of the new product will generate new opportunities in the mobile and automotive industries, adding that the 10nm-class LPDDR5 DRAM will be available in two bandwidths for different needs from such segments.

“By doubling the number of memory banks, or subdivisions within a DRAM cell, from eight to 16, the new memory can attain a much higher speed while reducing power consumption,” the company said.

“The 8Gb LPDDR5 also makes use of a highly advanced, speed-optimized circuit architecture that verifies and ensures the chip’s ultra-high-speed performance,” it added.

Samsung said the 8Gb LPDDR5 DRAM chip consumes 30 percent less power compared to its predecessor, allowing smartphones to last longer. The company said such developments will allow smartphones to come with stable ultra-HD, AI and machine-learning features as well.

“This development of 8Gb LPDDR5 represents a major step forward for low-power mobile memory solutions,” the company said. “We will continue to expand our next-generation 10nm-class DRAM lineup as we accelerate the move toward greater use of premium memory across the global landscape.”

An official from Samsung Electronics said mass production of the memory chip will begin in the near future depending on demand from clients.

Yonhap