SK hynix develops 12-layer high-bandwidth memory

A 24-gigabyte HBM3 developed by SK hynix [SK HYNIX]

SK hynix developed a 12-layer high-bandwidth memory (HBM) with a 24-gigabyte capacity, the chipmaker said Thursday.

The latest HBM3 is the first of its kind with the largest memory capacity in the industry, according to SK hynix.

HBMs stack layers of dynamic random access memory (DRAM) vertically to better support high-performance computing. The HBM products specialize in data-heavy tasks, such as running generative artificial intelligence (AI).

SK hynix stacked 12 DRAMs, a first in the industry, by reducing each DRAM’s thickness by 40 percent. The memory capacity was enhanced to 24 gigabytes, compared to the previous maximum capacity of 16 gigabytes of an 8-layer HBM3.

The plan is to complete preparation for mass-production of the 12-layer HBM3 products in the first half of the year. SK hynix has handed out sample products of the latest HBM3 to its clients to verify its performance.

“By completing preparation for mass production of the latest product in the first half of the year, we will solidify our leadership in high-end DRAM market in the era of AI,” said Hong Sang-hoo, head of the Package & Test division at SK hynix.

BY SHIN HA-NEE [shin.hanee@joongang.co.kr]