SK hynix develops 10 nm DDR5 server DRAM

SK hynix's 64-gigabyte Double Data Rate 5 (DDR5) module based on the fifth-generation 10-nanometer class process node [SK HYNIX]

SK hynix developed an advanced fifth-generation 10-nanometer class process technology (DDR5) for dynamic random access memory (DRAM), the chipmaker said Tuesday.

A sample DDR5 for servers based on the latest 10-nanometer class node was provided to Intel for system validation in data center applications, according to SK hynix. The sample DDR5 has a data transfer rate of 6.4 gigabits per second, which the company described as the fastest in the industry.

The fifth-generation process technology, which is also known as the 1b, translates to better production efficiency compared to the previous fourth-generation 1a node technology, due to its smaller process node.

The latest 10-nanometer class technology will also improve the energy efficiency of the DRAM product by more than 20 percent compared to the previous fourth-generation technology.

SK hynix hopes the 1b nanometer process technology will drive up its slumping profitability through the rest of the year.

“Amid growing expectations that the memory market will start to recover from the second half, we believe our industry-leading DRAM technology, proven again through mass production of the 1b nanometer process this time, will help us improve earnings from the second half,” said Kim Jong-hwan, head of DRAM development at SK hynix.

The latest process technology will be used for the production of advanced DRAMs, such as LPDDR5T and HBME3E starting in the first half of next year.

BY SHIN HA-NEE [shin.hanee@joongang.co.kr]