Samsung Electronics develops new DRAM chip using CXL technology

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Samsung Electronics develops new DRAM chip using CXL technology

Samsung Electronics' 512-gigabyte CXL DRAM memory pack [SAMSUNG ELECTRONICS]

Samsung Electronics' 512-gigabyte CXL DRAM memory pack [SAMSUNG ELECTRONICS]

 
Samsung Electronics developed a new dynamic random access memory (DRAM) chip based on Compute Express Link (CXL) technology, the company said Tuesday.
 
CXL is an industry-standard interconnect that boosts the efficiency of data processing by maintaining the memory coherency of data stored in different locations. By establishing coherency between the memory space of the main processors and those of attached devices — such as accelerators and memory expansion — CXL interconnect enables high-speed communication with lower latency.
 
The latest 512-gigabyte CXL DRAM has four times the memory capacity and one-fifth the system latency compared to Samsung’s previous CXL model, enabling a server's memory capacity to scale up to tens of terabytes, according to the electronics manufacturer.
 
Samsung developed its first CXL DRAM memory module prototype in May 2021. In a bid to take the CXL technology up a notch for future commercialization, Samsung collaborated with data center, enterprise server and chipset companies, the manufacturer said.
 
“CXL DRAM will become a critical turning point for future computing structures by substantially advancing artificial intelligence and big data services, as we aggressively expand its usage in next-generation memory architectures including software-defined memory,” said Park Cheol-min, Samsung vice president of memory global sales and marketing, and director of the CXL Consortium.
 
Park added that “Samsung will continue to collaborate across the industry to develop and standardize CXL memory solutions, while fostering an increasingly solid ecosystem.”

BY SHIN HA-NEE [shin.hanee@joongang.co.kr]
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